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STO Strontium Titanate - Video
https://www.crystalsubstrates.com/products/strontium-titanate-srtio3-substrates
Strontium Titanate or SrTiO3 (STO) single crystal provides a good lattice match to most materials with Perovskite structure and is also used to grow many cubic materials too. Its lattice constant (3.905Å) and a twin-less crystal structure and very good physical and mechanical properties for film growth.
A perovskite is a material that has the same crystal structure as the first-discovered mineral with perovskite crystal structure, calcium titanium oxide. Generally, perovskite compounds have a chemical formula ABX3, where ‘A' and ‘B' represent cations and X is an anion that bonds to both. In SrTiO3, Sr sits on the A site, Ti on the B site and as is expected in oxides and thin films, X site is oxygen. However, many perovskite thin films with different A and B cations can be stabilised on SrTiO3. This opens up STO being used to being the most commonly used substrates to grow and study complex oxide perovskites including but not limited to titanates, aluminates, ferrites, zirconates and stannates.
It is particularly well known as the substrate for the growth of the lanthanum aluminate-strontium titanate interface and being the substrate of choice for epitaxial growth of high-temperature superconductors (e.g. YBCO).
SrTiO3 has an indirect band gap of 3.25 eV and a direct gap of 3.75 eV in the typical range of semiconductors. Synthetic strontium titanate has a very large dielectric constant (300) at room temperature and low electric field. It has a specific resistivity of over 109 Ω-cm for very pure crystals.
SrTiO3 material has a melting point of 2080 °C (3776 °F) and is readily attacked by hydrofluoric acid. Under extremely low oxygen partial pressure, strontium titanate decomposes via incongruent sublimation of strontium well below the melting temperature.
Its bulk lattice parameter of 3.905Å makes it suitable as the substrate for some noteworthy materials including the growth of lanthanum (LaAlO3), Barium strontium titanate (BaxSr1-xTiO3, BST), highly conducting strontium ruthenate (SrRuO3) and many others.
Strontium ruthenate, SrRuO3, thin films grown on STO are epitaxial and are highly conducting (almost metallic like conductivity) therefore are commonly grown (15-200 nm thickness) to create a conducting electrode under subsequent layers.
Strontium Titanate or SrTiO3 (STO) single crystal provides a good lattice match to most materials with Perovskite structure and is also used to grow many cubic materials too. Its lattice constant (3.905Å) and a twin-less crystal structure and very good physical and mechanical properties for film growth.
A perovskite is a material that has the same crystal structure as the first-discovered mineral with perovskite crystal structure, calcium titanium oxide. Generally, perovskite compounds have a chemical formula ABX3, where ‘A' and ‘B' represent cations and X is an anion that bonds to both. In SrTiO3, Sr sits on the A site, Ti on the B site and as is expected in oxides and thin films, X site is oxygen. However, many perovskite thin films with different A and B cations can be stabilised on SrTiO3. This opens up STO being used to being the most commonly used substrates to grow and study complex oxide perovskites including but not limited to titanates, aluminates, ferrites, zirconates and stannates.
It is particularly well known as the substrate for the growth of the lanthanum aluminate-strontium titanate interface and being the substrate of choice for epitaxial growth of high-temperature superconductors (e.g. YBCO).
SrTiO3 has an indirect band gap of 3.25 eV and a direct gap of 3.75 eV in the typical range of semiconductors. Synthetic strontium titanate has a very large dielectric constant (300) at room temperature and low electric field. It has a specific resistivity of over 109 Ω-cm for very pure crystals.
SrTiO3 material has a melting point of 2080 °C (3776 °F) and is readily attacked by hydrofluoric acid. Under extremely low oxygen partial pressure, strontium titanate decomposes via incongruent sublimation of strontium well below the melting temperature.
Its bulk lattice parameter of 3.905Å makes it suitable as the substrate for some noteworthy materials including the growth of lanthanum (LaAlO3), Barium strontium titanate (BaxSr1-xTiO3, BST), highly conducting strontium ruthenate (SrRuO3) and many others.
Strontium ruthenate, SrRuO3, thin films grown on STO are epitaxial and are highly conducting (almost metallic like conductivity) therefore are commonly grown (15-200 nm thickness) to create a conducting electrode under subsequent layers.
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