Effects of fluorine implantation on polysilicon with high–k Er<div style="display : inline; font-size:xx-small;">2</div>O<div style="display : inline; font-size:xx-small;">3</div> dielectrics

This paper reports on electrical and physical characteristics of erbium oxide (Er₂O₃) dielectric films combined with fluorine implantation on polycrystalline silicon. It was found that high–k Er₂O₃ polyoxides with fluorine implantation have lower trapping rates and higher dielectric breakdown fields than as–deposited samples. Research indicates that the fluorine ion can passivate dangling and weak Si–H bonds, forming strong Si–F bonds after adequate rapid thermal annealing and resulting in superior characteristics and improved electrical stress endurance.

Keywords: fluorine implantation, polysilicon, Er2O3 dielectrics, Si–F bonds, erbium oxide, nanotechnology